Browsing by Author "Livshits, Alexander I."

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    Determination of Young's modulus of Sb2S3 nanowires by in situ resonance and bending methods
    (2016) Jasulaneca, Liga; Meija, Raimonds; Livshits, Alexander I.; Prikulis, Juris; Biswas, Subhajit; Holmes, Justin D.; Erts, Donats
    In this study we address the mechanical properties of Sb2S3 nanowires and determine their Young's modulus using in situ electricfield- induced mechanical resonance and static bending tests on individual Sb2S3 nanowires with cross-sectional areas ranging from 1.1·104 nm2 to 7.8·104 nm2. Mutually orthogonal resonances are observed and their origin explained by asymmetric cross section of nanowires. The results obtained from the two methods are consistent and show that nanowires exhibit Young's moduli comparable to the value for macroscopic material. An increasing trend of measured values of Young's modulus is observed for smaller thickness samples.
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    Fabrication and Characterization of Double- and Single-Clamped CuO Nanowire Based Nanoelectromechanical Switches
    (2021-01) Jasulaneca, Liga; Livshits, Alexander I.; Meija, Raimonds; Kosmaca, Jelena; Sondors, Raitis; Ramma, Matiss M.; Jevdokimovs, Daniels; Prikulis, Juris; Erts, Donats
    Electrostatically actuated nanoelectromechanical (NEM) switches hold promise for operation with sharply defined ON/OFF states, high ON/OFF current ratio, low OFF state power consumption, and a compact design. The present challenge for the development of nanoelectromechanical system (NEMS) technology is fabrication of single nanowire based NEM switches. In this work, we demonstrate the first application of CuO nanowires as NEM switch active elements. We develop bottom-up and top-down approaches for NEM switch fabrication, such as CuO nanowire synthesis, lithography, etching, dielectrophoretic alignment of nanowires on electrodes, and nanomanipulations for building devices that are suitable for scalable production. Theoretical modelling finds the device geometry that is necessary for volatile switching. The modelling results are validated by constructing gateless double-clamped and single-clamped devices on-chip that show robust and repeatable switching. The proposed design and fabrication route enable the scalable integration of bottom-up synthesized nanowires in NEMS.